Structural Modification along Heavy Ion Tracks in Poly(allyl diglycol carbonate) Films
نویسندگان
چکیده
منابع مشابه
DNA damage recognition proteins localize along heavy ion induced tracks in the cell nucleus.
To identify the repair dynamics involved in high linear energy transfer (LET) radiation-induced DNA damage, phospho-H2AX (gammaH2AX) foci formation was analyzed after cellular exposure to iron ions (Fe-ions, 500 MeV u(-1), 200 KeV microm(-1)). The foci located at DNA damage sites were visualized using immunocytochemical methods. Since H2AX is phosphorylated at sites of radiation-induced double ...
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In recent experiments the irradiation of insulators of perovskite type with swift heavy ions under glancing incidence has been shown to provide a unique means to generate periodically arranged nanodots at the surface. The physical origin of these patterns has been suggested to stem from a highly anisotropic electron density distribution within the bulk. In order to show the relevance of the ele...
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Swift heavy ion (SHI) irradiation of conventional glasses results in non-saturable plastic flow as a consequence of the ion hammering effect [1]. SHI irradiation of amorphous Si (a-Si) at non-perpendicular incidence also leads to unsaturated plastic flow, which shows a linear dependence on the ion fluence. The positive direction of flow suggests that a liquid phase with density similar to that ...
متن کاملFine structure in swift heavy ion tracks in amorphous SiO2.
We report on the observation of a fine structure in ion tracks in amorphous SiO2 using small angle x-ray scattering measurements. Tracks were generated by high energy ion irradiation with Au and Xe between 27 MeV and 1.43 GeV. In agreement with molecular dynamics simulations, the tracks consist of a core characterized by a significant density deficit compared to unirradiated material, surrounde...
متن کاملMaking tracks: electronic excitation roles in forming swift heavy ion tracks.
Swift heavy ions cause material modification along their tracks, changes primarily due to their very dense electronic excitation. The available data for threshold stopping powers indicate two main classes of materials. Group I, with threshold stopping powers above about 10 keV nm(-1), includes some metals, crystalline semiconductors and a few insulators. Group II, with lower thresholds, compris...
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ژورنال
عنوان ژورنال: Japanese Journal of Applied Physics
سال: 2008
ISSN: 0021-4922,1347-4065
DOI: 10.1143/jjap.47.3606